توجه: محتویات این صفحه به صورت خودکار پردازش شده و مقاله‌های نویسندگانی با تشابه اسمی، همگی در بخش یکسان نمایش داده می‌شوند.
۱Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells
نویسنده(ها):
اطلاعات انتشار: بیست و دومین کنفرانس بین المللی برق، سال
تعداد صفحات: ۵
This paper describes the fabrication of polysilicon cell with phosphorous spin–on diffusion technique and the electrical parameters measurement of the fabricated solar cells . The current–voltage characteristics of polycrystalline silicon solar cells were measured in the dark . A diode quivalent model was used to describe the electrical properties of solar cells. The diode ideality factor , the saturation current , the series and
shunt resistance have been measured . The best series resistance which has been obtained for polysilicon solar cell has a value of about 3 Ω . The best shunt resistance is about 14.5 kΩ and the saturation current and the A factor of the polysilicon solar cell which is fabricated by
the phosphorous spin–on diffusion method , are respectively 0.00003 A and 3.2 .
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