توجه: محتویات این صفحه به صورت خودکار پردازش شده و مقاله‌های نویسندگانی با تشابه اسمی، همگی در بخش یکسان نمایش داده می‌شوند.
۱A MEMS Capacitive Microphone Modelling for Integrated Circuits
نویسنده(ها): ، ،
اطلاعات انتشار: International Journal of Engineering، بيست و هشتم،شماره۶، Jun ۲۰۱۵، سال
تعداد صفحات: ۹
In this paper, a model for MEMS capacitive microphone is presented for integrated circuits. The microphone has a diaphragm thickness of 1 μm, 0.5 × 0.5 mm2 dimension, and an air gap of 1.0 μm. Using the analytical and simulation results, the important features of MEMS capacitive microphone such as pull–in voltage and sensitivity are obtained 3.8V and 6.916 mV\Pa, respectively while there is no pressure on the diaphragm. The microphone also has a capacitance of 2.3 pF. Using the relation between the capacitance and pressure signal, a 3 ports model for the MEMS microphone is proposed. To bias the microphone, a 2.3 V DC and a 1 GΩ resistor is used. The voltage and current signal of the microphone is proportional to the applied pressure of the acoustic wave. A RC filter is added to circuit to eliminate the low band frequency (≤ 20 Hz) noises. The microphone shows good response to amplitude and frequency changes versus applied pressure signal.

۲Radio Frequency–micro Electromechanical System Switch with High Speed and Low Actuated Voltage
نویسنده(ها): ،
اطلاعات انتشار: International Journal of Engineering، بيست و نهم،شماره۱۰، Oct ۲۰۱۶، سال
تعداد صفحات: ۴
This paper presents a novel Radio Frequency–Micro Electromechanical System (RF–MEMS) fixed–fixed switch for very fast switching. Using the obtained equations, the switching time depends on the stiffness and effective mass of the switch beam so that the switching time will be decreased by higher stiffness (spring constant) and lower effective mass. In the new design, the suspension bridge is a three–layer beam so that the middle layer is aluminum and outer layers are alumina. The reduced dimensions and three layers of beam cause to increase stiffness and reduce the mass of the beam. This led to increase the resonant frequency and as a result, the switching time is reduced. The results show that, the switching time is 127 ns for the applied voltage of 27V and also the pull–in voltage is 18V. The return loss is 12 dB at the frequency of 60 GHz that is desirable and the achieved results is better than previous works. Therefore, this switch is suitable for high frequency applications.
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