توجه: محتویات این صفحه به صورت خودکار پردازش شده و مقاله‌های نویسندگانی با تشابه اسمی، همگی در بخش یکسان نمایش داده می‌شوند.
۱Two and Three–Electrode Structure for Quantum–Dot Semiconductor Optical Amplifiers
نویسنده(ها): ،
اطلاعات انتشار: بیستمین کنفرانس مهندسی برق ایران، سال
تعداد صفحات: ۶
To compensate for the decreasing carrier density in the far side of quantum–dot semiconductor optical amplifiers (QD–SOAs), which directly compromises the optical gain,multi–electrode approach for these devices is introduced. In our study two and three–electrode QD–SOA are studied and tried to establish a base for comparison between these multi–electrode techniques and constant form of injected current. The optical gain of QD–SOA is improved by nearly 10% throughdiscretizing the optimum non–uniform current and then applying it to multi–electrode structure. For doing so, the rateequation model is employed and solved through finite difference method and MATLAB ODE<\div>

۲Electrode Lengths Optimization for Two–Electrode Quantum–Dot Semiconductor Optical Amplifiers
نویسنده(ها): ،
اطلاعات انتشار: بیستمین کنفرانس مهندسی برق ایران، سال
تعداد صفحات: ۵
In this paper, two–electrode structure for quantumdot semiconductor optical amplifiers (QD–SOAs) is studied, in order to find the optimized lengths for electrodes which in thoselengths, the optical gain of the device reaches its maximum. To this end, the rate equation model has been employed and solved through finite difference method and MATLAB ODE<\div>
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