توجه: محتویات این صفحه به صورت خودکار پردازش شده و مقاله‌های نویسندگانی با تشابه اسمی، همگی در بخش یکسان نمایش داده می‌شوند.
۱Microring Waveguide Quantum Dot Infrared Photodetectors for WDM Optical Interconnection
نویسنده(ها): ، ،
اطلاعات انتشار: شانزدهیمن کنفرانس مهندسی برق ایران، سال
تعداد صفحات: ۶
The new structure for quantum dot photodetectors is presented and its performance is analyzed. This structure enhances the efficiency and provides wavelength selective response. It can be impalement by any semiconductors structure such as IV–IV and III–V materials in which one can make optical waveguide. Using experimental reported data on quantum dot photodetectors, Ge quantum dot on Si microring photodetectors are designed and studied and some estimation on their efficiency and spectral selectivity, are presented and discussed. It is shown that one can enhance the efficiency of quantum dot photodetectors more than one order and simultaneously achieve single–channel selective response with subnanometer spectral resolution in C and L optical telecommunication bands<\div>

۲Analysis of Low Threshold Organic Vertical Cavity Surface Emitting Laser under Optical Excitation
اطلاعات انتشار: بیستمین کنفرانس مهندسی برق ایران، سال
تعداد صفحات: ۵
We investigate the impact of optical excitation in organic vertical cavity surface emitting laser (OVCSEL) to achieve lasing condition. Our simulation shows that for theoptical excitation case, triplet excitons quench singlet excitons largely when we apply constant input optical pump. Also we show that for wide pulses, we can use low inputpump power, but, lasing time will be delayed. Finally, we can optimise our structure to get lasing threshold for lowinput optical pump. Reaching low threshold lasing under optical injection enables us to get lasing under electrical injection.<\div>

۳The influence of bulk donor and acceptor traps on electrical behavior of p+n photodiode based on InSb
اطلاعات انتشار: همایش ملی مهندسی برق و توسعه پایدار با محوریت دستاوردهای نوین در مهندسی برق، سال
تعداد صفحات: ۴
The influence of bulk donor and acceptor traps on electrical behavior of p+n photodiode based on InSb, is modeled. Theeffects of different trap types with different energy level on the dark current level, recombination rate, and electric field profile at 77Kare investigated. Our results show that the bulk acceptor traps with energy level near valence band significantly increase the darkcurrent and reduce the electric field. We also show that the acceptor traps in bulk increase recombination rate<\div>
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