توجه: محتویات این صفحه به صورت خودکار پردازش شده و مقاله‌های نویسندگانی با تشابه اسمی، همگی در بخش یکسان نمایش داده می‌شوند.
۱FLEXIBLE CU(IN,GA)SE2 SOLAR CELLS WITH IN2S3 BUFFER LAYER
نویسنده(ها): ، ،
اطلاعات انتشار: اولین کنفرانس و نمایشگاه بین المللی انرژی خورشیدی، سال
تعداد صفحات: ۷
Polycrystalline Cu(In,Ga)Se2 (CIGS) thin films on flexible metallic foils (titanium, molybdenum, aluminum, stainless steel) were prepared by a twostepselenization of co–evaporated metallic precursors in Se–containing environment under N2 gas flow. Characterisations included studies of morphologicalfeatures, formation of crystalline phases and the depth compositional uniformity of the final thin films. To characterize the optical quality and intrinsicdefect nature low–temperature photoluminescence, photoluminescence excitation measurements were performed. Experiments shows that the structural andoptical properties of CIGS absorber layers strongly depend on the growth condition, type of substrate and chemical composition. With an aim to developflexible CIGS solar cells with vacuum evaporated In2S3 buffer layer, an attempt has been made to investigate physical properties of films grown bythermal evaporation technique. Solar cells were completed by vacuum deposition of ZnO\ZnO:Al layers and Ni\Al contact fingers. The better conversion efficiencies were around 10.0 %.<\div>

۲PREPARATION OF SN1–XPBXS THIN FILMS FOR OPTOELECTRONIC APPLICATION
نویسنده(ها): ، ، ،
اطلاعات انتشار: اولین کنفرانس و نمایشگاه بین المللی انرژی خورشیدی، سال
تعداد صفحات: ۷
Thin films and nanorods of Sn1–XPbXS with orthorhombic crystal structure and c–axis oriented perpendicular to the substrate surface were grown by hot wall vacuum deposition (HWVD) method. The nanorods grew via a selfconsuming vapor–liquid–solid (VLS) mechanism by means of Sn–droplets onto the surface of an underlying thin film. The former one consists of stacked blocks with their c–axis always parallel to the growth direction. However, each block is alternately rotated around the [001] against its underlying and following one. As revealed by composition analysis there is no composition gradient across or within the nanorods and the underlying film. The rods were about 510–7 m high, 310–7 m in diameter. The droplet at the top of rods consists of Sn with small trace of Pb and S. The density of rods arranged like a lawn depends on the metal ratio and substrate temperature. The as–grown Sn1–XPbXS samples showed p–type electrical conductivity. The increase of lead atoms concentration leads to decrease of Seebeck coefficient and decrease of conductivity.<\div>
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