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۱A Sub–Critical Barrier Thickness Normally–Off AlGaN\GaN MOS–HEMT Based–HfLaO Gate Oxide
نویسنده(ها): ،
اطلاعات انتشار: کنفرانس بین المللی مهندسی برق، سال
تعداد صفحات: ۵
The article presents the results of modelling and simulation of normally–off AlGaN\GaN MOS–HEMT transistors.The use of high–k dielectrics at thicknesses of 5, 10, and 20 nm and ultrathin sub–critical 3 nm Al0.25Ga0.75N barrier layer on the electrical characteristics of the transistor has been examined. The electrical performances of, threshold voltage, on– and off– currents and transconductance of the device were extracted from TCAD Silvaco–Atlas simulator tool.It was found that the maximum current of the device can reach 426 mA at Vgs = 5V with an off–state current of less than 3.26×10–16A, leads to an on\off current ratio of 1.3× 1015, at 5 nm insulator thick. The device shows a high transconductance of 130 mS\mm and threshold voltage of 1.36 V. It has been demonstrated that the use of HfLaO, instead of HfO2 and La2O3, as GOX (gate oxide) increases on–state current above 0.4 A and reduces the negative influence of the charge accumulated in the dielectric layer<\div>
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