Design and Implementation of Ultra Low Dropout Regulatorششمین همایش مراکز تحقیق و توسعه صنایع و معادن
Today low dropout regulators are widely used in Low Power circuits. This paper presents the design and implementation of a LDO regulator with high current and very low dropout voltage. One of the advantages of this circuit is using an n–channel MOSFET as power transistor. In this circuit Gate Voltage of MOSFET should be higher than input voltage, which is carried by a voltage up converter. The Implemented LDO is designed for a voltage of 11V which with a current of 1A the maximum Dropout will be 25mV, which shows improvement in comparison to conventional regulators.<\div>
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