مقالههای R. Zamani
توجه: محتویات این صفحه به صورت خودکار پردازش شده و مقالههای نویسندگانی با تشابه اسمی، همگی در بخش یکسان نمایش داده میشوند.
اطلاعات انتشار: همایش ملی نانو مواد و نانو تکنولوژی، سال ۱۳۸۸
تعداد صفحات: ۶
Due to the various important applications in thin film technology such as electronic devices, the interface between metal and oxides are interested particularly. It has been the main topic of many research projects to illustrate that their properties depend highly on the structure of the interface. Thin metal films offer several advantages because of the ability to deposite directly in vacuum environment that can prevent the existence of contamination in the film and also, low cost of metallic materials lead to developing this field rapidly. The interfacial properties of a depositsubstrate system are mainly influenced by the stress which developed at the interface. It has been shown that the interfacial stress depends on many parameters such as the contamination at the interface, the mechanical properties of the substrate and thin films, growth mode of the thin film and also the structure and the misfit between the thin film and substrate lattice parameters. In this study, electrical conductivity of the thin Pd film was investigated as a consequence of changing the thickness. Pd improved to an interesting metallic thin film due to inconceivable adhesion properties. It has been found that the stress which appear after the thin film deposition governed the electrical conductivity in the thickness range between 30nm to 70nm. However, semi– continues film has been observed in the thickness of Pd thin film lower than 10 nm. Indeed, the 3D growth has been observed in the higher thickness of Pd thin film.<\div>
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